Conventional n-channel MOSFET devices using single layer HfO/sub 2/ and ZrO/sub 2/ as high-k gate dielectrics with polysilicon gate electrode

摘要

Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000/spl deg/C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO/sub 2//poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO/sub 2//poly-Si transistors.