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MOS semiconductor devices having polysilicon gate electrodes and high dielectric constant gate dielectric layers and methods of manufacturing such devices
MOS semiconductor devices having polysilicon gate electrodes and high dielectric constant gate dielectric layers and methods of manufacturing such devices
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机译:具有多晶硅栅电极和高介电常数栅介电层的MOS半导体器件及其制造方法
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摘要
A semiconductor device includes a substrate divided into an NMOS region and a PMOS region, a first gate pattern formed on the PMOS region, and a second gate pattern formed on the NMOS region. The first gate pattern includes a first gate oxide layer pattern, a metal oxide layer pattern, a silicon nitride layer pattern and a first polysilicon layer pattern that are sequentially stacked. The second gate pattern includes a second oxide layer pattern and a second polysilicon layer pattern. Related methods are also provided.
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