High-performance EB chemically amplified resist using alicyclic protective groups

摘要

The impact of alicyclic protective groups on acid-labile substituents in a vinylphenol-methacrylate-based chemically amplified positive resist was investigated. The resist consists of the copolymer of vinylphenol and admantyl methacrylate (VP/AdMA) with triflate onium salt as a photo-acid generator. The alicyclic protective groups in our system show a higher reactivity and higher hydrophobicity thanb those of the tert-butyl group, which is widely used in chemically amplified resists. The resists containing the alicyclic protective group resolved 0.09- mu m hole patterns at 6 mu C/cm~2, and a resit with a base additive resolved 0.12- mu m line and space patterns at 9.0 mu C/cm~2 using a 50-keV EB lithography system with a 2.38