CHEMICALLY AMPLIFIED RESIST, POLYMER FOR THE CHEMICALLY AMPLIFIED RESIST, MONOMER FOR THE POLYMER AND METHOD FOR TRANSFERRING PATTERN TO CHEMICALLY AMPLIFIED RESIST LAYER

摘要

The present invention relates to 3-oxo-4-oxa-bicyclo [3.2.1] octane-2 relates to a chemically amplified resist which is based on a vinyl polymer having a group, the resist is light of a wavelength of up to 220 nm represented by formula (1) high transparency for, large dry etching (dry etching) resistant and to exhibit good adhesion to the substrate:;; [Wherein, each of L ^1, L ^2, L ^3, L ^4, L ⁵ and L ⁶ is selected from the group consisting of hydrogen atom and alkyl group having 1 to 8 carbon atoms, a hydrogen atom in L ⁵ and L ^6, and / or alkyl group is substituted with an alkylene group having 1 to 10 carbon atoms that bond to one another to form a ring.