首页> 外文会议>Ion Implantation Technology, 2000. Conference on >Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation

【24h】

Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation

机译：氢离子注入硅中形成的纳米隐腔的微观结构和光学效应

获取原文

页面导航

著录项
相似文献
相关主题

著录项

来源
《Ion Implantation Technology, 2000. Conference on》|2000年|P.769-772|共4页
会议地点
作者
Li; L.; Yu; Y.H.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATOR LAYER FORMED BY O~+ AND N~+ CO-IMPLANTATION [J] . 俞跃辉, 林成鲁, 朱文化, 电子科学学刊：英文版 . 1992,第001期

机译：由O〜+和N +共注入形成的埋藏绝缘层的光学效应和微观结构
2. Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing [J] . A.G. Ulyashin, J.S. Christensen, B.G. Svensson, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2006,第1a2期

机译：通过等离子体氢化和退火在离子注入硅中的掩埋缺陷层处吸氢
3. Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing [J] . A. V. Frantzkevich, Anis M. H. Saad, A. V. Mazanik, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2004,第0期

机译：氧气和真空退火后的低温表面饱和后，氢气在注入氢的硅晶片上的缺陷缺陷层上的吸气
4. Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation [C] . L. Li, Y. H. Yu, Z. X. Lin, International Conference on Ion Implantation Technology . 2000

机译：通过氢离子注入在硅中形成的掩埋纳米腔的微观结构和光学效应
5. Electrical and optical characterization of intrinsic and ion-implantation induced defects in 6-hydrogen-silicon carbide and 4-hydrogen-silicon carbide. [D] . Scott, Michael Buryl. 1999

机译：6氢碳化硅和4氢碳化硅中本征和离子注入引起的缺陷的电学和光学表征。
6. Distribution of Silicified Microstructures Regulation of Cinnamyl Alcohol Dehydrogenase and Lodging Resistance in Silicon and Paclobutrazol Mediated Oryza sativa [O] . Deivaseeno Dorairaj, Mohd Razi Ismail 2017

机译：硅和多效唑介导的水稻中硅化微结构的分布肉桂醇脱氢酶的调控和抗倒伏性
7. Formation of the buried insulating SixNy layer in the region of radiation defects created by hydrogen implantation in silicon wafer [O] . A. V. Frantskevich, A. Saad, A. K. Fedotov, 2015

机译：在硅晶片中通过氢注入产生的辐射缺陷区域中形成埋入的绝缘sixNy层
8. Buried Insulator Formation in Silicon by Ion Implantation: A Review [R] . Stein, H. J. 1986

机译：离子注入硅埋置绝缘子：综述

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

客服微信
服务号