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Growth of AlInGaP in multiwafer planetary reactors(R)

机译:多晶片行星反应堆中AlInGaP的生长(R)

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Since the invention of the Planetary Reactors(R) a reliable tool for mass production of various III-V compounds is existing. These reactors haven proven to grow extremely uniform films together with a highly efficient utilization of the precursors. Now a new generation of Planetary Reactors(R) is introduced: the so-called G3 systems. Their main features are: an inductive heating system with extremely low thermal mass for precise and fast heating, high flexibility in the reactor size (15/spl times/2", 35/spl times/2" to 9/spl times/4" wafer load so far, further enlargement possible) and the option to use a fully automated cassette-to-cassette wafer loading system. The benefits of this new design are very short cycle times, extreme run-to-run stability and even further reduced cost of ownership. The performance of this reactor will be discussed in conjunction with the well established ATX 2400 reactor with a set up of 15/spl times/2" or 5/spl times/4" wafer. Uniformity of thickness, luminescence intensity and composition of the most important III-V compounds such as GaInP, GaInAsP and AlGaInP were shown.
机译:自从行星式反应器发明以来,就存在一种可靠的工具,可以大量生产各种III-V族化合物。事实证明,这些反应器可以生长出非常均匀的薄膜,并且可以高效利用前体。现在,推出了新一代的Planetary Reactors(R):所谓的G3系统。它们的主要特征是:感应加热系统,具有极低的热质量,可进行精确而快速的加热,反应器尺寸具有高度的灵活性(15 / spl次/ 2“,35 / spl次/ 2”至9 / spl次/ 4“到目前为止的晶片装载量,可能会进一步扩大),并可以选择使用全自动的盒对盒晶片装载系统,这种新设计的优点是周期时间非常短,运行间具有极高的稳定性,甚至进一步降低了成本该反应器的性能将与完善的ATX 2400反应器一起讨论,该反应器具有15 / spl次/ 2“或5 / spl次/ 4”晶片的设置。厚度,发光强度和成分的均匀性显示了最重要的III-V化合物,如GaInP,GaInAsP和AlGaInP。

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