GaAs and InP nano-hole arrays fabricated by reactive beam etching using highly ordered alumina membranes

机译：通过使用高度有序的氧化铝膜进行反应束刻蚀制造的GaAs和InP纳米孔阵列

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Highly ordered nano-channel arrays consisting of an anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nano-channel pattern into III-V semiconductors. The alumina mask shows high tolerance to RBE using Br/sub 2//N/sub 2/ mixed gas system. GaAs and InP nano-hole arrays with high aspect ratio were obtained.

机译：由阳极多孔氧化铝组成的高度有序的纳米通道阵列被用作反应束蚀刻（RBE）的掩模，以将纳米通道图形转换为III-V半导体。使用Br / sub 2 // N / sub 2 /混合气体系统，氧化铝掩模对RBE的耐受性很高。获得了具有高纵横比的GaAs和InP纳米孔阵列。

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《Indium Phosphide and Related Materials, 1998 International Conference on》|1998年|P.781-784|共4页
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Nakao; M.; Oku; S.;
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中图分类无线电电子学、电信技术;
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1. Fabrication of high quality factor photonic crystal microcavities in InAsP/InP membranes combining reactive ion beam etching and reactive ion etching [J] . L. J. Martinez, I. Prieto, B. Alen, Journal of Vacuum Science & Technology . 2009,第4期

机译：结合反应离子束刻蚀和反应离子刻蚀在InAsP / InP膜中制造高质量因子光子晶体微腔
2. Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching [J] . Ohori Daisuke, Fukuyama Atsuhiko, Sakai Kentaro, Japanese journal of applied physics . 2017,第5期

机译：通过中性束蚀刻制备的GaAs / AlGaAs纳米柱阵列中的GaAs纳米盘的光致发光
3. 2/spl times/2 InGaAsP/InP laser amplifier gate switch arrays using reactive ion etching [J] . Kwan Ryong Oh, Joo-Heon Ahn Electronics Letters . 1996,第1期

机译：2 / spl次/ 2 InGaAsP / InP激光放大器栅极开关阵列，采用反应性离子蚀刻
4. GaAs and InP nano-hole arrays fabricated by reactive beam etching using highly ordered alumina membranes [C] . Nakao M., Oku S., Institute of Electric and Electronic Engineer International Conference on Indium Phosphide and Related Materials . 1998

机译：GaAs和InP纳米孔阵列通过高度有序的氧化铝膜蚀刻而制造的反应梁蚀刻
5. Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth [D] . Rode, Johann Christian 2015

机译：超过1 THz带宽的大规模InP / InGaAs DHBT
6. Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching [O] . Hidetaka Asoh, Ryota Imai, Hideki Hashimoto 2017

机译：金属辅助化学刻蚀制备的Au盖GaAs纳米柱阵列
7. Ion-Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP/InP Light Emitting Diodes [O] . H. Angerstein-kozlowska, B. Macdougall, R. R. Adzic, 1983

机译：Inp的离子束刻蚀及其在高辐射InGaasp / Inp发光二极管制备中的应用
8. High-Performance InGaAsP/InP Buried-Heterostructure Lasers and Arrays Defined by Ion-Beam-Assisted Etching [R] . Yap, D., Liau, Z. L., Tsang, D. Z., 1988

机译：由离子束辅助蚀刻定义的高性能InGaasp / Inp埋入式异质结构激光器和阵列

GaAs and InP nano-hole arrays fabricated by reactive beam etching using highly ordered alumina membranes

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