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首页> 外文期刊>Japanese journal of applied physics >Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching
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Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

机译:通过中性束蚀刻制备的GaAs / AlGaAs纳米柱阵列中的GaAs纳米盘的光致发光

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摘要

GaAs quantum nanodisks (QNDs) in nanopillar (NP) arrays are considered to be an attractive candidate for photonic device applications. We report a damageless fabrication technique that can be used to produce large-area lattice-matched GaAs/AlGaAs heterostructure NP arrays through the use of a bio-template and neutral beam etching. We have successfully realized GaAs QNDs in NPs owing to nanoscale iron oxide masks included in poly(ethylene glycol)-decorated ferritin protein shells. We observed for first time the photoluminescence emission from asetched GaAs QNDs and confirmed quantum confinement by quantum mechanical calculation. Our methodology is vital for high-efficiency pillarbased optoelectronic devices such as NP laser diodes. (C) 2017 The Japan Society of Applied Physics
机译:纳米柱(NP)阵列中的GaAs量子纳米盘(QND)被认为是光子器件应用的有吸引力的候选人。我们报告了一种无损制造技术,该技术可通过使用生物模板和中性束蚀刻来生产大面积晶格匹配的GaAs / AlGaAs异质结构NP阵列。我们已经成功地实现了NP中的GaAs QND,这是因为包含修饰了聚乙二醇的铁蛋白蛋白外壳的纳米级氧化铁掩模。我们首次观察到了被腐蚀的GaAs QND的光致发光,并通过量子力学计算确认了量子限制。我们的方法对于诸如NP激光二极管之类的高效基于支柱的光电设备至关重要。 (C)2017日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2017年第5期|050308.1-050308.4|共4页
  • 作者单位

    Univ Miyazaki, Fac Engn, Miyazaki 8892192, Japan;

    Univ Miyazaki, Fac Engn, Miyazaki 8892192, Japan;

    Univ Miyazaki, Ctr Collaborat Res & Community Cooperat, Miyazaki 8892192, Japan;

    Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan;

    Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan;

    Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan|Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan;

    Univ Miyazaki, Fac Engn, Miyazaki 8892192, Japan;

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