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首页> 外文期刊>Applied Physics Letters >Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth
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Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth

机译：通过中性束刻蚀和原子氢辅助分子束外延再生结合制备的GaAs纳米盘的光致发光

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摘要

We have fabricated GaAs nanodisk (ND) structures by using a combination of neutral beam etching process and atomic hydrogen-assisted molecular beam epitaxy regrowth. We have observed clear photoluminescence (PL) emissions from GaAs NDs. The peak energy showed a blueshift due to the quantum confinement in three spatial dimensions, and it agreed with the theoretically estimated transition energy. The PL results also showed that the cap-layer disks act as radiative recombination centers. We have confirmed that the PL emission originates from the GaAs NDs, and our approach is effective for the fabrication of high quality ND structures.
机译：我们通过结合中性束刻蚀工艺和原子氢辅助分子束外延再生来制造GaAs纳米盘（ND）结构。我们已经观察到GaAs ND产生清晰的光致发光（PL）发射。由于在三个空间维度上的量子限制，峰值能量显示出蓝移，并且其与理论上估计的跃迁能量一致。 PL结果还表明盖层盘充当辐射复合中心。我们已经证实，PL辐射源自GaAs ND，并且我们的方法对于制造高质量ND结构是有效的。

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  • 来源
    《Applied Physics Letters》 |2012年第11期|p.113108.1-113108.4|共4页
  • 作者

    Toshiyuki Kaizu; Yosuke Tamura; Makoto Igarashi; Weiguo Hu; Rikako Tsukamoto; Ichiro Yamashita; Seiji Samukawa; Yoshitaka Okada;

  • 作者单位

    Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba,Meguro-ku, Tokyo 153-8904, Japan,Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan;

    Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan,Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan,Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan,Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan,Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan,Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama,Ikoma, Nara 630-0192, Japan;

    Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan,Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan,WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku,Sendai 980-8577, Japan;

    Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba,Meguro-ku, Tokyo 153-8904, Japan,Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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