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Ion-Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP/InP Light Emitting Diodes

机译：Inp的离子束刻蚀及其在高辐射InGaasp / Inp发光二极管制备中的应用

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作者
H. Angerstein-kozlowska; B. Macdougall; R. R. Adzic; D. N. Simic; A. R. Despic; M. D. Spasojevic; D. F. A. Koch; R. Woods; Osamu Wada;
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年度 1983
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专利

1. Mechanism of catastrophic degradation in InGaAsP/InP double‐heterostructure light emitting diodes and GaAlAs double‐heterostructure light emitting diodes applied with pulsed large current [J] . Journal of Applied Physics . 1982,第12期

机译：施加大电流脉冲的InGaAsP / InP双异质结构发光二极管和GaAlAs双异质结构发光二极管的灾难性退化机理
2. Study of Linear Light Edge-Emitting Diodes Based on InP/InGaAsP/InP Heterostructure with the Crescent Active Region [J] . M. G. Vasil’ev, A. M. Vasil’ev, Yu. O. Kostin, Inorganic materials: applied research . 2018,第5期

机译：基于具有新月形有源区的InP / InGaAsP / InP异质结构的线性发光二极管的研究
3. Buried crescent InP/InGaAsP/InP heterostructure on p-InP for linear edge-emitting diodes [J] . Vasilev M. G., Vasilev A. M., Kostin Yu. O., Inorganic materials . 2017,第11期

机译：p-InP上的埋入式新月形InP / InGaAsP / InP异质结构，用于线性边缘发射二极管
4. 1.3-um and 1.55-um InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence [C] . Xiaoyu Ma, Institute of Semiconductors, Beijing, Integrated Optoelectronics . 1996

机译：具有窄束发散的1.3um和1.55um InGaAsP / InP量子阱发光二极管
5. High-power near-resonant 1.55 micrometer-emitting InGaAsP/InP antiguided diode laser arrays. [D] . Bhattacharya, Arnab. 1997

机译：大功率近谐振1.55微米发射InGaAsP / InP反导二极管激光器阵列。
6. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes [O] . Tsung-Rong Kuo, Shih-Ting Hung, Yen-Ting Lin, 2017

机译：InP / ZnS核/壳量子点的绿色合成用于无重金属的发光二极管
7. 1.57 μm InGaAsP/InP surface emitting lasers by angled focus ion beam etching [O] . Lee H. P., Scherer A., Beebe E. D., 1992

机译：通过倾斜聚焦离子束蚀刻获得1.57μmInGaAsP / InP表面发射激光器
8. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)- Based Chemistries: Part II: InP, InGaAs, InGaAsP, InAs and AllnAs;Applied Surface Science [R] . Abernathy, C. R. , Han, J. , Hobson, W. S. , 1998

机译：在BCl（3）基化学中的III-V半导体的电感耦合等离子体蚀刻：第二部分：Inp，InGaas，InGaasp，Inas和allnas;应用表面科学

Ion-Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP/InP Light Emitting Diodes

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