首页> 外国专利> Method of fabricating deflection aperture array for electron beam exposure apparatus, wet etching method and apparatus for fabricating the aperture array, and electron beam exposure apparatus having the aperture array

Method of fabricating deflection aperture array for electron beam exposure apparatus, wet etching method and apparatus for fabricating the aperture array, and electron beam exposure apparatus having the aperture array

机译:用于电子束曝光设备的偏转孔阵列的制造方法,用于制造孔阵列的湿蚀刻方法和设备以及具有该孔阵列的电子束曝光设备

摘要

A method of fabricating a deflection aperture array used in an electron beam exposure apparatus and a wet etching method and apparatus for fabricating the deflection aperture array are disclosed. In wet etching an aperture array substrate, a jig is used for holding the substrate in such a manner that only a portion of the reverse side to be etched is exposed to an etching solution so that the surface protective film can be removed before wet etching. According to the wet etching method, a gas is introduced into or discharged from an enclosed spacing facing a non-etched surface thereby to adjust the internal pressure of the enclosed spacing. The internal pressure of the enclosed spacing is thus detected and held at a predetermined value in accordance with the detected pressure.
机译:公开了一种制造在电子束曝光设备中使用的偏转孔阵列的方法以及一种用于制造偏转孔阵列的湿蚀刻方法和设备。在湿蚀刻孔阵列基板中,使用夹具来保持基板,使得仅要蚀刻的背面的一部分暴露于蚀刻溶液,从而可以在湿蚀刻之前去除表面保护膜。根据湿蚀刻方法,将气体引入面对未蚀刻表面的封闭空间中或从封闭空间中排出,从而调节该封闭空间的内部压力。因此,检测出所包围的间隔的内部压力,并根据检测到的压力将其保持在预定值。

著录项

  • 公开/公告号US6313023B1

    专利类型

  • 公开/公告日2001-11-06

    原文格式PDF

  • 申请/专利权人 ADVANTEST CORPORATION;

    申请/专利号US19990329631

  • 发明设计人 SHIGERU MARUYAMA;

    申请日1999-06-10

  • 分类号H01L214/40;

  • 国家 US

  • 入库时间 2022-08-22 01:02:54

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号