The present status of the various ingenious approaches made until now to increase Schottky barrier heights (SBHs) on InP and related materials are reviewed from the viewpoints of the mechanism of SBH increase, the SBH values achieved, the controllability and reproducibility of the process, and the barrier reliability. The approaches discussed include: (1) formation of insulator interlayers, (2) formation of semiconductor interlayers, (3) sulphur and selenium surface treatments, (4) low temperature metal deposition, (5) plasma surface treatments, and (6) electrochemical deposition. Particular emphasis is placed on the in-situ electrochemical process by the author's group where Fermi level pinning seems to be removed.
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