Simulation of Rapid Thermal Annealed Boron Ultrashallow Junctions in Inert and Oxidizing Ambient

摘要

Rapid Thermal Annealing (RTA) is indispensable for the formation of ultra-shallow source/drain junctions. To improve the annealing conditiosn ,a fundamental understanding of the influences on the diffusion/activation process is necessary. Ion implantations of 1 keV boron at a dose of #PHI# approx approx 1 centre 10~15 cm~-2 are annealed i na SHS2800#epsilon# RTP-system under controlled concentrations of oxygen in nitrogen ambient (0-1 ppm up to 1