METHOD OF FORMING ULTRASHALLOW JUNCTIONS BY LASER ANNEALING AND RAPID THERMAL ANNEALING

摘要

The method of heat-treating a semiconductor wafer containing a dopant material are provided. The wafer is irradiated with laser energy sufficient to activate the dopant material without melting the wafer. In addition, the rapid thermal annealing of the wafer is performed at a relatively low temperature low to recover the crystal damage. Dopant activation is achieved without the diffusion can be measured at all. Low-temperature annealing is rapid because the recovery of crystal damage, the device has a good mobility and low leakage current.