METHOD OF FORMING ULTRASHALLOW JUNCTIONS BY LASER ANNEALING AND RAPID THERMAL ANNEALING

摘要

Methods are provided for thermal processing of a semiconductor wafer that contains a dopant material. The wafer is irradiated with laser energy sufficient to activate the dopant material without melting the wafer. In addition, rapid thermal annealing of the wafer is performed at relatively low temperature to repair crystalline damage. The dopant activation is achieved with no measurable diffusion. The low temperature rapid thermal anneal repairs crystalline damage, so that devices have good mobilities and low leakage currents.