Selective Si/SiGe heterostructures for advanced CMOS and BiCMOS technologies

摘要

New device architectures for advanced Integrated Circuits (IC) have been studied within the frame of our GRESSI Program through the technological development of the well known but less implemented low temperature selective epitaxial Si and SiGe films.High performance IC manufacturing requirements,such as large diameter wafer uniformity,reproducibility,throughput and reliability can be met by commercial integrated processing,single wafer cluster tools.