Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substrates

摘要

Cryogenic cathodoluminescence (CL) and electron beam induced current (EBIC) are used to investigate the band structure in novel modulation-doped lateral injection ridge lasers. EBIC successfully reveals the position and regularity of the junction between hole and electron gases on planes of differing indices, with sub-micrometre resolution. CL is able to map the carrier density in an electron gas on a very narrow (100) facet, where no measurement via electrical contacts could be made.