High performance and large area flip-chip bonded AlGaN/GaN MODFETs

摘要

Using flip-chip bonding for thermal management, we improve the performance of AlGaN/GaN MODFETs grown on sapphire substrates. Current density and transconductance increase from 1.1 A/mm and 200 mS/mm to 1.6 A/mm and 280 mS/mm due to improved thermal resistance. We have also made wide gate (1 mm and 2 mm) MODFETs for the first time using this approach. DC and RF device results are presented.