Abstract: This paper investigates the plasma etch characteristics of electron beam processed photoresist. A standard positive novolak photoresist, as well as an advanced deep-UV photoresist, are evaluated. Etch characteristics are determined for an oxide etch application. Etch selectivity of the photoresist is determined as a function of electron beam dose. Photoresist undercut and wall slope variation are also determined as a function of dose. The performance of the electron beam processed photoresist is evaluated for line and via formation. The etch characteristics of the electron beam processed photoresist are compared with the etch characteristics for untreated and thermally processed photoresist. In most cases there is an improvement in photoresist profile integrity with increasing electron beam dose. Interaction of the processed photoresist with the plasma chemistry, and its effect on post process removal, are also presented. Finally, a process model is presented for using the electron beam process in current production plasma etch applications. !8
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