Growth condition dependence of n-type carriers at the interface between InP substrates and epitaxial layers grown by MOCVD

摘要

We investigated the dependence of n-type carriers at the interface between InP substrates and epitaxial layers grown by MOCVD on the phosphine (PH/sub 3/) partial pressure and the growth temperature sequence. The carrier concentration decreases with increasing PH/sub 3/ partial pressure. The carrier concentration also reduces when the temperature during thermal etching is high, and the temperature during the initial growth stage is low. Silicon and oxygen were detected as impurities at the interface by secondary ion mass spectrometry (SIMS) measurement. The silicon concentration is no less than 1/spl times/10/sup 17/ cm/sup -3/ under all growth conditions. The oxygen concentration varied from 1/spl times/10/sup 17/ cm/sup -3/ to 8/spl times/10/sup 17/ cm/sup -3/ and had no relationship with the carrier concentration.