Passivation of InP surfaces

摘要

Results of a study of the suitability of various insulators in combination with various deposition techniques for the passivation of InP surfaces are presented. It is shown that among the techniques investigated, the best results were obtained with the remote plasma-enhanced chemical vapor deposition (PECVD) technique. The benefits of integral photoluminescence measurements for judging the influence of a variety of process steps during InP passivation on the semiconductor surface are discussed.