首页> 美国政府科技报告 >Etude des Surfaces d'InP et des Interfaces InP Isolant Par Photoluminescence (Photoluminescence Study of InP Surfaces and InP-Insulator Interfaces)
【24h】

Etude des Surfaces d'InP et des Interfaces InP Isolant Par Photoluminescence (Photoluminescence Study of InP Surfaces and InP-Insulator Interfaces)

机译:Etude des surfaces d'Inp et des Interfaces Inp Isolant par photoluminescence(Inp表面和Inp绝缘体界面的光致发光研究)

获取原文

摘要

The effect of chemical or heat treatments on the luminescence spectra produced by InP surfaces or interfaces is studied. The application of the results to implement a process control system to manufacture MSI structures is described. The intensity of the spectral peaks is correlated to the electronic characteristics of the junction. It is shown that the described procedures are a valid contribution to improve electronic device quality.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号