Ammonium sulfide vapor passivation of ln_(0.53)Ga_(0.47)As and InP surfaces

摘要

The efficiency of the ammonium sulfide vapor (ASV) treatment, as opposed to the wet treatment in the liquid ammonium sulfide solution, on the performance improvement of the Ino.53Gao.47As surface-channel as well as InP-capped buried-channel metal-oxide-semiconductor field-effect-transistors (MOSFET) was demonstrated for the first time. MOSFETs were fabricated with either HC1 or ASV surface treatments prior to the gate oxide deposition. ASV treatment was found to be very efficient in boosting the drive current of the transistors compared to that of the HC1 treatment. It was also found that the ASV treatment leads to a lower border trap density and slightly higher oxide/semiconductor interface defect density compared to that of the HC1 treatment. X-ray photoelectron spectroscopy (XPS) studies of In_(0.53)Ga_(0.47)As native oxide regrowth after both surface treatments identified indium sub-oxides as a possible cause of the performance degradation of the HCl treated devices. Based on this work, ASV treatment could be an efficient solution to the passivation of III-V surfaces.