Enhanced Schottky barrier InP MESFETs

摘要

The design, fabrication, and characterization of a stable InP MESFET with a delta-doped p/sup +/ layer are outlined. The 1 mu m gate length MESFET has a transconductance of 110 mS/mm; the InP surface was not passivated or treated prior to the gate metal deposition. Measured f/sub max/ and f/sub T/ are 11.6 GHz and 5.4 GHz respectively.