Barrier height enhancement of InP-based n-Ga/sub 0.47/In/sub 0.53/As Schottky-barrier diodes grown by molecular beam epitaxy

摘要

Barrier height enhancement of an InP-based p/sup +-Ga/sub 0.47/In/sub 0.53/As Schottky diode grown by MBE has been demonstrated for infrared photodetector applications. A barrier height of 0.35 eV for n-Ga/sub 0.47/In/sub 0.53/As Schottky barrier diodes, was increased to the effective barrier height of 0.55 eV, with a p/sup +/-Ga/sub 0.47/In/sub 0.53/As surface layer of 30 nm thick. The results show a reverse leakage current density of 1.5*10/sup -3/ A/cm/sup 2/ and a junction capacitance of 0.3 pF, which are comparable to those of p-Ga/sub 0.47/In/sub 0.53/As Schottky-barrier diodes at a reverse bias voltage of 5 V.