Schottky barrier enhancement on n-InP solar cell applications

摘要

It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved