The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology

摘要

In this paper, we present new results on the width dependent hot-carrier (HC) reliabilities for shallow-trench-isolated (STI) pMOSFETs in a multiple oxide CMOS technology. For the first time, different phenomena in pMOSFETs, for a multiple oxide process have been observed. Extensive studies have been made for ALD grown and plasma treated oxide pMOSFETs. Experimental data shows that the drain current degradation is enhanced for a reducing gate width. For thick oxide, the I_D degradation is due to the channel length shortening, and the electron trap is dominant for the device degradation. While for thin gate oxide, the I_D degradation is due to width narrowing, and the hole trap is dominant, in which both electron and hole trap induced V_T shifts are significant. The degradation in thick-oxide pMOSFETs causes an increase of off-state leakage current and an increase of ΔV_T in thin-oxide with reduced width.