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A Novel Differential Multi-Bit Carbon Nanotube Through Silicon Vias

机译:通过硅通孔的一种新型差分多比特碳纳米管

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Aiming at the problem of I/O limitation between layers in three-dimensional integrated circuits, a novel type of differential multi-bit carbon nanotube TSV is proposed. The equivalent circuit model of the structure is established in ADS. The simulation results of S parameters in ADS and HFSS can fit well. Compared with the traditional GSSG TSV and two kinds of novel two-bit TSVs (G-SS-G and GS-SG), the proposed differential multi-bit CNT TSV saves chip area, improves the integration density, and has superior anti-interference ability.
机译:针对三维集成电路层之间的I / O限制的问题,提出了一种新型的差分多比特碳纳米管TSV。 结构的等效电路模型在广告中建立。 广告和HFSS中的S参数的仿真结果可以适合。 与传统的GSSG TSV和两种新型两位TSV(G-SS-G和GS-SG)相比,所提出的差分多位CNT TSV节省芯片面积,提高了集成密度,并且具有卓越的抗干扰 能力。

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