Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

机译：总剂量辐照后400V超薄SOI NLDMOS的电学特性

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The electrical characteristics variations of 400V SOI NLDMOS after exposure to total dose irradiation are discovered. The mechanisms of these variations are analyzed and confirmed by TCAD simulations.

机译：发现暴露于总剂量辐照后400V SOI NLDMOS的电特性变化。通过TCAD仿真分析并确认了这些变化的机制。

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《International Conference on Radiation Effects of Electronic Devices》|2019年|1-4|共4页
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Lei Shu; Yuan-Fu Zhao; Liang Wang; Tian-Qi Wang; Xin Zhou; Zhang-Yi’an Yuan; Kai Zhao; Ming-Xue Huo; Chao-Ming Liu; Guo-Liang Ma; Yan-Qing Zhang; Chun-Hua Qi; Ming Qiao; Wei-Ping Chen;
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Radiation effects; Electric fields; Impact ionization; Semiconductor device measurement; Analytical models; Silicon-on-insulator; Electric variables;

机译：辐射效应;电场;冲击电离;半导体器件测量;分析模型;绝缘体上硅;电变量;

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2. Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation [J] . Cester A., Gerardin S., Paccagnella A., IEEE Transactions on Nuclear Science . 2005,第6期

机译：辐照后超薄栅极氧化物SOI MOSFET上的电应力
3. Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides [J] . J.M. Rafi, B. Vergnet, F. Campabadal Microelectronics & Reliability . 2002,第9a11期

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4. Characteristic analysis of total dose irradiation annealing effect in SOI NMOSFET [C] . He Yujuan, Luo Hongwei, En Yunfei 2013 20th IEEE International Symposium on the Physical amp; Failure Analysis of Integrated Circuits . 2013

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7. Erratum: influence of high dose gamma irradiation on electrical characteristics of Si photo detectors ECS J. Solid State Sci. Technol., 6, Q132 (2017)ud [O] . Vinay Kumar M., Santosh Kumar, Cheng Chun, 2017

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8. Worst-Case Bias During Total Dose Irradiation of SOI Transistors [R] . Ferlet-Cavrois, V. , Cooladant, T. , Paillet, P. , 2000

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Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

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