Characteristic analysis of total dose irradiation annealing effect in SOI NMOSFET

机译：SOI NMOSFET中总剂量辐照退火效应的特性分析

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摘要

The effect of total-dose irradiation annealing on SIMOX SOI MOSFET with different bias and temperature was studied. It has been demonstrated that the annealing effect was more remarkable with ON bias than the others and more obvious in high temperature than room temperature.

机译：研究了总剂量辐照退火对不同偏压和温度下SIMOX SOI MOSFET的影响。已经证明，在具有ON偏压的情况下，退火效果比其他方法更显着，并且在高温下比在室温下更明显。

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来源
《2013 20th IEEE International Symposium on the Physical amp; Failure Analysis of Integrated Circuits》|2013年|736-740|共5页
会议地点 Suzhou(CN)
作者
He Yujuan; Luo Hongwei; En Yunfei;
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作者单位

Science and Technology on Reliability Physics and Application of Electrical Component Laboratory, Guangzhou, 510610, Chinac;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
SOI device; bias condition; irradiation; total dose effect;

机译：SOI器件;偏置条件;辐照;总剂量效应;;

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2. Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs [J] . Peng C., Hu Z., Ning B., Nuclear Science, IEEE Transactions on . 2015,第1期

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3. Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET [J] . Xin Xie, Da-Wei Bi, Zhi-Yuan Hu, 中国物理：英文版 . 2018,第012期

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4. Characteristic analysis of total dose irradiation annealing effect in SOI NMOSFET [C] . HE Yujuan, LUO Hongwei, EN Yunfei IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits . 2013

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Characteristic analysis of total dose irradiation annealing effect in SOI NMOSFET

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