Design and Evaluation of Neale-Based Multi-bit Adjacent Error-Correcting Codec for SRAM

摘要

Due to scaling in CMOS technology, multiple bit upsets (MBUs) have been widely occurred in memories. As a result, multiple adjacent bits of memories are corrupted and valuable information are lost forever. To mitigate these problems, multi-bit adjacent error-correcting codes are generally employed in SRAM memories. Single error correction-double error detection-double adjacent error correction (SEC-DED-DAEC) codes are used to mitigate radiation or noise source induced MBUs to protect static random access memory (SRAM) devices. These codes are able to correct single and double adjacent errors, and also detect double errors. In this paper, three different SEC-DED-DAEC codes have been designed and implemented for SRAM memories. All functional blocks of these codecs are simulated and synthesized both in FPGA and ASIC platforms. Performances of the different SEC-DED-DAEC codes are observed in terms of area and delay.