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FPGA Based Low Area Multi-bit Adjacent Error Correcting Codec for SRAM Application

机译:用于SRAM应用的FPGA基于低区域多位相邻纠错编解码器

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摘要

Mostly random and adjacent error correcting codes are used to protect stored data in SRAMs against multiple bit upsets (MBUs). These MBUs caused by radiation are an important issue related to the reliability of static random access memories (SRAMs). As a result, multiple adjacent bits of a memory are distorted and valuable information is lost. To mitigate these problems, multi-bit adjacent error correcting codes are preferable in SRAM. In this paper, single error correction-double error detection-double adjacent error correction (SEC-DED-DAEC) codes are proposed. The performances of the proposed SEC-DED-DAEC codes are observed in terms of area and delay. Theoretical area overhead of proposed codes is at most 49.98% lower compared to the related design. Also the proposed design has around 28.79% lesser critical path delay compared to existing design. The best improvement achieved in terms of number of look-up table (LUT) and delay are 22.69 and 29.98% respectively compared to other existing codes in FPGA platform. The proposed codes can be used in embedded SRAM applications.
机译:大多数是随机和相邻的纠错码用于保护SRAM中的存储数据对多个位UPSET(MBU)。由辐射引起的这些MBU是与静态随机存取存储器(SRAM)的可靠性相关的重要问题。结果,存储器的多个相邻位扭曲,并且有价值的信息丢失。为了缓解这些问题,在SRAM中可以优选多位置相邻纠错码。在本文中,提出了单个误差校正 - 双误差检测 - 双相邻纠错(SEC-DED-DAEC)代码。在面积和延迟方面观察所提出的SEC-DEC-DAEC代码的性能。与相关设计相比,所提出的代码的理论区域最多为49.98%。与现有设计相比,拟议的设计也具有大约28.79%的关键路径延迟。与FPGA平台中的其他现有代码相比,在查找表(LUT)和延迟数量方面所实现的最佳改进分别为22.69和29.98%。所提出的代码可用于嵌入式SRAM应用程序。

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