Mask crosstalk defect between develop to etch process

摘要

As technical advances continue, the pattern size of semiconductor circuit has been shrunk. Defect control becomes tighter due to decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra high density pattern for sub - 20nm tech device. Therefore particle source from all processes should be controlled extremely. Most of defects generated in mask fabrication processes have been mainly created during each unit process. A different formation mechanism defect which formed between processes to processes is starting to emerge. In this paper, we introduce a very distinctive crosstalk defect between develop to etch process. This defect only in the presence of photoresist, developer, etching species and interaction will produce. We also successful to reproduce this crosstalk defect by particle monitor mask without exposing the production pattern. By the experiment results we will bring forward the possible defect generation mechanism. Based on this understanding, appropriate solution to mitigate defects caused by crosstalk defect between develop to etch will be proposed.