Developing a defect reduction strategy for the copper dual-damascene oxide etch process

摘要

Particles and the defects they cause have long been a problem in semiconductor manufacturing. Since the first deanroom was built, particle detection and reduction have been major concerns in the industry. Particle sources may be classified into three categories: particles from the fab atmosphere, particles caused by the handling of wafers, and particles generated by manufacturing tools and actual processes. Improvements in cleanroom design have greatly reduced airborne particles, and advances in cleanroom procedures and wafer-handling techniques have resulted in fewer particle sources. But particle generation caused by wafer fabrication tools and their related processes remains a challenge.