Prevention of Temperature-Induced Dewetting of Implanted SOI via Heated Ion Implantation

摘要

To co-integrate bipolar devices with 28 nm FDSOI CMOS using the epitaxial extrinsic base isolated from the collector architecture, an epitaxy is needed on a pre-implanted SOI. The issue of thin film agglomeration induced by epitaxy pre-bake is addressed. Particularly, it is shown that high dose implantation induced damages and point defects lead to a decrease of the SOI critical temperature of agglomeration. In this study, heated implantation is proposed in order to solve this issue.