Impact of 1μ m TSV via-last integration on electrical performance of advanced FinFET devices

摘要

In this work, the impact of 1x5μm Via-last integration on an advanced bulk FinFET technology is investigated. We find that mechanical impact of TSV proximity is below detection limit, however plasma-induced damage (PID) is observed on small devices (high antenna aspect ratio). Finally, a back-side anneal raising the TSV thermal budget shows no increase of mechanical impact though it partially cures PID damage on small devices.