Formation of magnesium silicide for source material in Si based tunnel FET by annealing of Mg/Si thin film multi-stacks

摘要

Magnesium silicide (MgSi) on Si use in Tunnel FET source-channel region that can improve the drive current to 2 order and more. In this work, we propose to deposit Mg and Si for multi-stacks by RF magnetron sputtering and evaluated the firmed MgSi. That has an atomically flat interface and surface are formed before and after annealing and Mg atoms encroachment into Si, therefore the MgSi on Si was formed epitaxially grown was observed. And the silicide could observe as semiconductor and band gap as 0.72eV. Finally, the MgSi/Si diode electrical characteristics shows that ideality-factor of diode was low as 1.06.