The D-band MMIC LNA circuit using 70nm InP HEMT technology

摘要

In this paper, We describe a D-band (110-170GHz) low noise amplifier (LNA) MMIC structure using a 70nm InP (Indium phosphide) HEMT (high electron mobility transistor) process. This circuit structure is cascade circuits mode with two voltages bias that can make all the internal two port network unconditional stable. Using this structure, a four-stage LNA working at 110-140 GHz frequency is designed and fabricated. On wafer measurements show that this LNA achieves a very good stability with a performance of 6 dB noise figure and 12 dB of gain typically. It's input voltage stay wave ratio (VSWR) and output VSWR are smaller than 3:1.