A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technology

摘要

We report the design and performance of state-of-the-art V-band MMIC LNA's using 0.1- mu m gate length pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP HEMT's. The three-stage V-band LNA demonstrated an average of 3.0 dB noise figure between 56-64 GHz with 24-25.5 dB associated gain with a noise figure of 2.7 dB measured at 62 GHz. Furthermore, the DC power dissipation of this circuit was only 19.5 mW which is less than one-third the DC power dissipation of InGaAs/AlGaAs/GaAs HEMT versions. These results demonstrate the excellent potential of InP HEMT technology for millimeter-wave and low DC power applications.