High power InGaAsP/InP semiconductor laser with low-doped active layer and very low series resistance

摘要

In conventional InGaAsP/InP semiconductor lasers the p-doping in the InP laser level cannot be increased above 1×10.sup.18 atoms/cm.sup. 3 without adversely affecting the optical characteristics of the devices. However, by introducing a thin low-doped p-InP layer and a thicker highly doped InP layer, good optical characteristics can be maintained and series resistance can be reduced by a factor of 2 to 4, thereby resulting in operable devices having significantly increased operating currents and higher output power than those of the prior art.