High Power InGaAsP/GaAs SCHSQW Lasers

摘要

InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold current density ( J th ) of 330 A/cm 2 to 450 A/cm 2 and external differe ntial quantum efficiency ( η d) of 35% to 75%, and these characteristics ar e in good agreement with the designed requirement.