Study of InGaAsP and GaInP layers grown by MOCVD in pure N-2 ambient for InGaAsP/GaAs single QW LD structures

摘要

InGaAsP and GaInP layers has been grown by MOCVD technique using tertiarybutylarsine and tertiarybutylphosphine in pure nitrogen ambient for fabrication of InGaAsP/GaAs single QW laser diode structures. The composition control and the temperature dependence of the optical quality of In1-xGaxAsyP1-y layers and the Si- and Zn-doping behaviors in GaInP layers are emphatically discussed. (C) 2004 Elsevier B.V. All rights reserved.