Study of selective area growth of InGaAsP QW structure by MOCVD

摘要

This work reports the dependence of the growth rate of the selectively grown multi quantum well (MQW) structure on the mask width and the mask opening using a twin stripe mask. The study is based on the vapor phase diffusion model of the re-evaporated reactant from the mask to the open area. The growth rate enhancement was found to be linearly varying with the mask width until 90 /spl mu/m for InGaAsP. The two dimensional vapor phase diffusion of the reactant species is modeled based on the fact that the reactants re-supplied from the mask surface diffuse to the opening area. We also studied, the bandgap energy shift by varying the mask width in selective MOVCD growth of InGaAsP and observed that the photoluminescence peak shifts towards the longer wavelength with wider mask width. The electroluminescence spectrum of MQW structure grown between twin tapered oxide masks shows the 375 nm 3 dB down bandwidth.