InGaAsP/GaAs SCHSQW laser arrays grown by LPE

摘要

InGaAsP/InGaP/GaAs separate confinement heterostructure (SCH) single quantum well (SQW) laser structures have been obtained by an improved liquid-phase epitaxy (LPE) process. Wide-contact stripe lasers have been fabricated with threshold current density below 300 A/cm(2) and cavity length of 800 mum. Finally, with the same grown wafers, 1-cm bar laser diode (LD) arrays are made with 150 mum wide stripes and a maximum fill factor of 30%. Continuous wave (CW) power output of 20 W has been reached. (C) 2000 Elsevier Science Ltd. All rights reserved. [References: 7]