Advanced IC designs are demanding a new level of performance and flexibility from the next generation of ion implanters. In addition to beamilne improvements for charge control, energy contamination, metals and cross contamination, the industry is also experiencing a new requirement with the emergence of Large Angle Tilt Implants (LATI 10-60 degrees). LATI can be employed to overcome Short Channel Effects (SCE) by the use of Halo/Pocket implants and more recently, for the control of gate overlap with SDE implants. This paper describes the beamline characteristics of the VIISta go single wafer high current implanter, from the standpoints of overall defect control and the tools ability to provide large angle tilt capability to address the needs of advanced scaled devices.
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