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SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION
SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION
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机译:绝缘硅晶圆制造中的单晶圆植入剂
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摘要
An ion implanter is disclosed. One such ion implanter includes an ion beam source configured to generate oxygen, nitrogen, helium, or hydrogen ions into an ion beam with a specific dose range, and an analyzer magnet configured to remove undesired species from the ion beam. The ion implanter includes an electrostatic chuck having a backside gas thermal coupling that is configured to hold a single workpiece for silicon-on-insulator implantation by the ion beam and is configured to cool the workpiece to a temperature in a range of approximately 300°C to 600°C.
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