Parasitic Extraction Procedures for SiC Power Modules

摘要

This paper presents an overview of the procedures performed both in academia and industry for estimating the parasitic behavior of power semiconductor packages. The modeling features and limitations of the state-of-the-art software tool, ANSYS Q3D Extractor, and the measurement methods typically used for the parasitic inductance analysis of silicon carbide (SiC) power modules are comprehensively analyzed on the example of a TO-247-3 package with a single 80 mΩ, 1.2kV SiC power MOSFET, and of a half-bridge wire-bondless module with two 25 mΩ, 1.2kV SiC power MOSFETs.