LOW PARASITIC INDUCTANCE POWER MODULE AND DOUBLE-SIDED HEAT-DISSIPATION LOW PARASITIC INDUCTANCE POWER MODULE

摘要

A low parasitic inductance power module, comprising: an input power terminal, an output power terminal (3), a top metal insulating substrate (4), a bottom metal insulating substrate (5), and a plastic package (15); the input power terminal comprises a positive power terminal (1) and a negative power terminal (2); the top metal insulating substrate (4) and the bottom metal insulating substrate (5) are stacked; chips are sintered on the face of the top metal insulating substrate (4) and the face of the bottom metal insulating substrate (5) that are opposite to each other, and the positive power terminal (1), the negative power terminal (2), and the output power terminal (3) are electrically connected to the chips; the output power terminal (3) comprises a soldering portion (31) and a connection portion (32) located outside the plastic package (15), and the soldering portion (31) is located between the top metal insulating substrate (4) and the bottom metal insulating substrate (5). Said power module lowers the parasitic inductance of a circuit, has a reduced power module volume, saves costs, and has a reduced weight, particularly being suitable for the packaging of a SiC power chip, and has an improved overcurrent capability, improving the reliability of the module.