首页> 外国专利> Low parasitic inductance power module and double-faced heat-dissipation low parasitic inductance power module

Low parasitic inductance power module and double-faced heat-dissipation low parasitic inductance power module

机译:低寄生电感功率模块和双面散热低寄生电感电源模块

摘要

A low parasitic inductance power module, which includes an input power terminal, an output power terminal, a top metal insulating substrate, a bottom metal insulating substrate and a plastic package shell, wherein the input power terminal includes a positive power terminal and a negative power terminal, the top metal insulating substrate and the bottom metal insulating substrate are stacked, chips are sintered on faces of both the top metal insulating substrate and the bottom metal insulating substrate opposite to each other, and the positive power terminal, the negative power terminal, and the output power terminal are all electrically connected with the chips; and the output power terminal includes a welding portion and a connecting portion located outside the plastic package shell, and the welding portion is located between the top metal insulating substrate and the bottom metal insulating substrate.
机译:低寄生电感功率模块,包括输入功率端子,输出功率端子,顶部金属绝缘基板,底部金属绝缘基板和塑料封装壳,其中输入功率终端包括正电源端子和负电源 终端,顶部金属绝缘基板和底部金属绝缘基板堆叠,芯片在顶部金属绝缘基板和彼此相对的底部金属绝缘基板的面上烧结,并且正电源端子,负电源端子, 输出功率端子全部与芯片电连接; 并且输出功率端子包括焊接部分和位于塑料封装壳外部的连接部分,并且焊接部分位于顶部金属绝缘基板和底部金属绝缘基板之间。

著录项

  • 公开/公告号US11139278B2

    专利类型

  • 公开/公告日2021-10-05

    原文格式PDF

  • 申请/专利权人 YANGZHOU GUOYANG ELECTRONIC CO. LTD.;

    申请/专利号US201716621700

  • 申请日2017-06-27

  • 分类号H01L25/07;H01L23/538;H01L23/498;H01L23/051;H01L23/49;H01L23/31;H01L23/367;H01L23/427;H01L23/14;

  • 国家 US

  • 入库时间 2022-08-24 21:26:13

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