Parasitic parameter extraction and analysis of high voltage SiC intelligent power module for three-phase motor control applications

摘要

Parasitic parameter extraction of intelligent power module is crucial to analyze transient noise, ground bounce, voltage and current overshoot. This paper investigates the relationship between the physical layout of a high voltage SiC intelligent power module and its equivalent circuit parasitic parameters. An accurate three-dimensional electronic structure of the high voltage SiC intelligent power module is provided and the parasitic elements are extracted from the three-dimensional physical layout model for crucial graphic patterns. Parameter extraction results are compared and studied with different parameter values of heatsink plate and copper layer in this research. The effects of different values of these two parameters on AC parasitic resistance and inductance are evaluated.